Molybdenum Ditelluride α (2H-MoTe2) is a semiconductor with an indirect band gap of 1.0 eV in bulk crystal form.
Using our high quality bulk crystals, large area monolayer flakes or few-layer flakes can be easily obtained by mechanical exfoliation.
MoTe2 possesses direct band-gap of around 1.1 eV in monolayer films.